ELECTRICAL AND OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY GROWN GA-DOPED ZNSE

被引：10
|
作者：
VAZIRI, M [1 ]
REIFENBERGER, R [1 ]
GUNSHOR, RL [1 ]
KOLODZIEJSKI, LA [1 ]
VENKATESAN, S [1 ]
PIERRET, RF [1 ]
机构：
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：253 / 258
页数：6
相关论文
共 50 条
  • [21] PHOTOLUMINESCENCE OF DONOR-DOPED ZNSE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    KARCZEWSKI, G
    HU, B
    YIN, A
    LUO, H
    DOBROWOLSKA, M
    FURDYNA, JK
    ACTA PHYSICA POLONICA A, 1995, 87 (01) : 245 - 248
  • [22] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    ZHU, ZQ
    TAKEBAYASHI, K
    TANAKA, K
    EBISUTANI, T
    KAWAMATA, J
    YAO, T
    APPLIED PHYSICS LETTERS, 1994, 64 (01) : 91 - 93
  • [23] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY
    QIU, J
    DEPUYDT, JM
    CHENG, H
    HAASE, MA
    APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2992 - 2994
  • [24] CHARACTERISTICS OF CL-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    OHKAWA, K
    MITSUYU, T
    YAMAZAKI, O
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3216 - 3221
  • [25] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    PARK, RM
    MAR, HA
    SALANSKY, NM
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1047 - 1049
  • [26] ELECTRICAL CHARACTERIZATION OF IODINE DOPED MOLECULAR-BEAM EPITAXIAL ZNSE
    WALLACE, JM
    SIMPSON, J
    WANG, SY
    STEWART, H
    HUNTER, JJ
    ADAMS, SJA
    PRIOR, KA
    CAVENETT, BC
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 320 - 323
  • [27] Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
    Fleck, A
    Robinson, BJ
    Thompson, DA
    APPLIED PHYSICS LETTERS, 2001, 78 (12) : 1694 - 1696
  • [28] THERMALLY INDUCED OPTICAL BISTABILITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KUDLEK, G
    HOLLANDT, J
    PRESSER, N
    GUTOWSKI, J
    DURBIN, SM
    MENKE, DR
    KOBAYASHI, M
    GUNSHOR, RL
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2532 - 2534
  • [29] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY-GROWN ZNSE ON GAAS
    KARPINSKA, K
    SUCHOCKI, A
    GODLEWSKI, M
    HOMMEL, D
    ACTA PHYSICA POLONICA A, 1993, 84 (03) : 551 - 554
  • [30] CORRELATION BETWEEN ELECTRICAL AND STRUCTURAL-PROPERTIES OF CHLORINE DOPED ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HOMMEL, D
    JOBST, B
    BEHR, T
    BILGER, G
    BEYERSDORFER, V
    KURTZ, E
    LANDWEHR, G
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 331 - 337
12345