ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE

被引：32
|
作者：
OHNO, H
OHTSUKA, S
ISHII, H
MATSUBARA, Y
HASEGAWA, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 20期
关键词：
D O I：
10.1063/1.101195
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2000 / 2002
页数：3
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