CARRIER INJECTION INTO THE SUBSTRATE OF GAAS-MESFET STRUCTURES

被引：3
|
作者：
TSIRONIS, C [1 ]
机构：
[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期
关键词：
D O I：
10.1109/T-ED.1980.20167
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2160 / 2162
页数：3
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