ELECTRICAL AND OPTICAL-PROPERTIES OF SILICON DOPED INP GROWN BY GAS SOURCE MBE

被引：7
|
作者：
MORISHITA, Y [1 ]
IMAIZUMI, M [1 ]
GOTODA, M [1 ]
MARUNO, S [1 ]
NOMURA, Y [1 ]
OGATA, H [1 ]
机构：
[1] OPTOELECTR TECHNOL RES CORP,AMAGASAKI 661,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期
关键词：
D O I：
10.1016/0022-0248(90)90147-D
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A detailed investigation was carried out on the characteristics of Si-doped InP grown by gas source MBE (GSMBE) using trimethylindium, phosphine and solid Si source. It has been found that the InP epitaxial layers grown by GSMBE have excellent qualities comparable to those grown by other epitaxial techniques. Good agreement was obtained between the Si equilibrium vapor pressure curve and the temperature dependence of the carrier concentration in the range from 6X1015 to 6X1018 cm-3. The Burstein-Moss shift was observed in the photoluminescence spectra. © 1990.
引用
收藏
页码：457 / 462
页数：6
相关论文
共 50 条
  • [41] ELECTRICAL AND OPTICAL-PROPERTIES OF IMPLANTED AMORPHOUS-SILICON
    WEI, JH
    LEE, SC
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1033 - 1040
  • [42] ELECTRICAL AND OPTICAL-PROPERTIES OF THALLIUM-DOPED PBTE
    GRUZINOV, BF
    DRABKIN, IA
    ELISEEVA, YY
    LEV, EY
    NELSON, IV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (07): : 767 - 770
  • [43] ELECTRICAL AND OPTICAL-PROPERTIES OF GE-DOPED GAP
    AOKI, M
    TAJIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 118 - 125
  • [44] Electrical and optical characterisation of silicon and silicon/phosphorus implants in InP doped with iron
    Martin, J. M.
    Garcia, S.
    Martil, I.
    Gonzalez-Diaz, G.
    Materials Science and Technology, 11 (11):
  • [45] Electrical and optical characterisation of silicon and silicon phosphorus implants in InP doped with iron
    Martin, JM
    Garcia, S
    Martil, I
    GonzalezDiaz, G
    Cusco, R
    Artus, L
    MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (11) : 1203 - 1206
  • [46] ELECTRICAL, OPTICAL-PROPERTIES, AND SURFACE-MORPHOLOGY OF HIGH-PURITY INP GROWN BY CHEMICAL BEAM EPITAXY
    RAO, TS
    LACELLE, C
    BENZAQUEN, R
    ROLFE, SJ
    CHARBONNEAU, S
    BERGER, PD
    ROTH, AP
    STEINER, T
    THEWALT, MLW
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5300 - 5308
  • [47] Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source
    Armitage, R
    Yang, Q
    Feick, H
    Park, Y
    Weber, ER
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 11 - 16
  • [48] Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
    Shen, XQ
    Ramvall, P
    Riblet, P
    Aoyagi, Y
    Hosi, K
    Tanaka, S
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 396 - 400
  • [49] ELECTRICAL AND OPTICAL-PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAAS
    SAMUELSON, L
    OMLING, P
    TITZE, H
    GRIMMEISS, HG
    JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 164 - 172
  • [50] ELECTRICAL AND OPTICAL-PROPERTIES OF VANADIUM IN OMVPE-GROWN GAAS
    HOBSON, WS
    PEARTON, SJ
    SWAMINATHAN, V
    JORDAN, AS
    KAO, YJ
    HAEGEL, NM
    KANBER, H
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 125 - 130
12345