OTHER DOSIMETER PARAMETERS MOS-TRANSISTORS

被引：0
|
作者：
HABRMAN, P
PETR, I
VYCHYTII, F
机构：
来源：
JADERNA ENERGIE | 1979年 / 25卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：64 / 67
页数：4
相关论文
共 50 条
  • [21] THERMAL RESISTANCE OF INTEGRATED MOS-TRANSISTORS
    KIRSCHNER, N
    MICROELECTRONICS AND RELIABILITY, 1975, 14 (01): : 37 - 39
  • [22] SHORT CHANNEL EFFECTS IN MOS-TRANSISTORS
    BJORKQVIST, K
    ARNBORG, T
    PHYSICA SCRIPTA, 1981, 24 (02): : 418 - 421
  • [23] DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS
    BATEMAN, IM
    ARMSTRONG, GA
    MAGOWAN, JA
    SOLID-STATE ELECTRONICS, 1974, 17 (06) : 539 - 550
  • [24] ANALYSIS OF THE KINK EFFECT IN MOS-TRANSISTORS
    HAFEZ, IM
    GHIBAUDO, G
    BALESTRA, F
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 818 - 821
  • [25] BIMOS TRANSISTORS - MERGED BIPOLAR SIDEWALL MOS-TRANSISTORS
    O, KK
    REIF, R
    LEE, HS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2606 - 2606
  • [26] OPTIMIZATION OF NONPLANAR POWER MOS-TRANSISTORS
    LISIAK, KP
    BERGER, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1229 - 1234
  • [27] MODELING SUBTHRESHOLD CAPACITANCES OF MOS-TRANSISTORS
    AFZALIKUSHAA, A
    ELNOKALI, M
    SOLID-STATE ELECTRONICS, 1992, 35 (01) : 45 - 49
  • [28] MAGNETOSENSITIVITY OF N-CHANNEL MOS-TRANSISTORS
    SMIRNOV, ND
    ROUMENIN, CS
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1981, 34 (11): : 1499 - 1501
  • [29] TEMPERATURE DEPENDENCE OF DRAIN CURRENT OF MOS-TRANSISTORS
    STILLGER, J
    ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1968, 25 (04): : 177 - +
  • [30] RELIABILITY PROBLEMS OF SUBMICRON MOS-TRANSISTORS AND CIRCUITS
    KRAUTSCHNEIDER, WH
    TERLETZKI, H
    WANG, Q
    MICROELECTRONICS RELIABILITY, 1992, 32 (11) : 1499 - 1508
12345