SIMULATION OF TEMPERATURE EFFECTS DURING RAPID THERMAL-PROCESSING

被引：11

|

作者：

KAKOSCHKE, R

BUSSMANN, E

机构：

来源：

RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING | 1989年 / 146卷

关键词：

D O I：

10.1557/PROC-146-473

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：473 / 482

页数：10

相关论文

共 50 条

[41] NEW LAMP ARRANGEMENT FOR RAPID THERMAL-PROCESSING
ZOLLNER, JP
ULLRICH, K
PEZOLDT, J
EICHHORN, G
APPLIED SURFACE SCIENCE, 1993, 69 (1-4) : 193 - 197
[42] MODELING OF 3-DIMENSIONAL EFFECTS ON TEMPERATURE UNIFORMITY IN RAPID THERMAL-PROCESSING OF 8 INCH WAFERS
KNUTSON, KL
CAMPBELL, SA
DUNN, F
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1994, 7 (01) : 68 - 72
[43] DEFECT-GUARDED RAPID THERMAL-PROCESSING
NENYEI, Z
WALK, H
KNARR, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (06) : 1728 - 1733
[44] SUBMICROMETER IGFET FABRICATION BY RAPID THERMAL-PROCESSING
MOSLEHI, MM
WRIGHT, PJ
SARASWAT, KC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2365 - 2365
[45] MODEL IDENTIFICATION IN RAPID THERMAL-PROCESSING SYSTEMS
CHO, YM
KAILATH, T
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1993, 6 (03) : 233 - 245
[46] RAPID THERMAL-PROCESSING FOR ACTIVE MATRIX DEVICES
FAIR, JE
SOLID STATE TECHNOLOGY, 1992, 35 (08) : 47 - 52
[47] THE DOPING OF SILICON WITH BORON BY RAPID THERMAL-PROCESSING
DESOUZA, JP
HASENACK, CM
SWART, JE
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) : 277 - 280
[48] SILICON TEMPERATURE-MEASUREMENT BY INFRARED TRANSMISSION FOR RAPID THERMAL-PROCESSING APPLICATIONS
STURM, JC
SCHWARTZ, PV
GARONE, PM
APPLIED PHYSICS LETTERS, 1990, 56 (10) : 961 - 963
[49] TEMPERATURE-DEPENDENCE OF SENSORY QUALITY CHANGES DURING THERMAL-PROCESSING
OHLSSON, T
JOURNAL OF FOOD SCIENCE, 1980, 45 (04) : 836 - &
[50] TIME-TEMPERATURE EQUIVALENCE OF DISCRETE PARTICLES DURING THERMAL-PROCESSING
SADEGHI, F
SWARTZEL, KR
JOURNAL OF FOOD SCIENCE, 1990, 55 (06) : 1696 - +

← 1 2 3 4 5 →