共 50 条
- [24] Precipitation of boron in silicon on high-dose implantation Semiconductors, 2010, 44 : 285 - 288
- [25] INFLUENCE OF NUCLEATION ON THE KINETICS OF BORON PRECIPITATION IN SILICON. Applied physics. A, Solids and surfaces, 1987, A44 (02): : 135 - 141
- [27] Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer Yang, D. (mseyang@dial.zju.edu.cn), 1600, Japan Society of Applied Physics (42): : 7290 - 7291
- [28] Effect of rapid thermal process on oxygen precipitation in heavily boron-doped Czochralski silicon wafer JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12): : 7290 - 7291