BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS

被引：100

|

作者：

PHILLIPS, JC

机构：

来源：

PHYSICAL REVIEW | 1962年 / 125卷 / 06期

关键词：

D O I：

10.1103/PhysRev.125.1931

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1931 / &

相关论文

共 50 条

[31] ENERGY BAND STRUCTURE OF GERMANIUM
MORGAN, DJ
GALLOWAY, JA
PHYSICA STATUS SOLIDI, 1967, 22 (02): : 491 - &
[32] STRUCTURE OF THE NITRIDES OF SILICON AND GERMANIUM
POPPER, P
RUDDLESDEN, SN
NATURE, 1957, 179 (4570) : 1129 - 1129
[33] BAND STRUCTURE OF MAGNETIC SEMICONDUCTORS
ADLER, D
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (02): : 156 - &
[34] BAND STRUCTURE OF MAGNETIC SEMICONDUCTORS
ADLER, D
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (03) : 261 - &
[35] BAND STRUCTURE OF MAGNETIC SEMICONDUCTORS
ADLER, D
FEINLEIB, J
JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) : 1586 - &
[36] MEASUREMENT OF THE BAND-GAP IN SILICON AND GERMANIUM
SUKHEEJA, BD
AMERICAN JOURNAL OF PHYSICS, 1983, 51 (01) : 72 - 72
[37] Nature of the band gap of silicon and germanium nanowires
Harris, Clive
O'Reilly, E. P.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 341 - 345
[38] Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials
Gonzalez S.
Vasileska D.
Demkov A.A.
Journal of Computational Electronics, 2002, 1 (1-2) : 179 - 183
[39] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS
AUVERGNE, D
CAMASSEL, J
MATHIEU, H
CARDONA, M
PHYSICAL REVIEW B, 1974, 9 (12): : 5168 - 5177
[40] Germanium on silicon approaches III-V semiconductors in performance
Morse, Mike
LASER FOCUS WORLD, 2007, 43 (05): : 111 - 113

← 1 2 3 4 5 →