HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES

被引：21

作者：

GEIS, MW ^{[1
]}

EFREMOW, NN ^{[1
]}

VONWINDHEIM, JA ^{[1
]}

机构：

[1] KOBE STEEL USA INC, CTR ELECTR MAT, RES TRIANGLE PK, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H-2, or O2 result in high surface leakage, while plasmas formed from N2 Or from CF4 with 8.5% O2 result in total leakage < 1000 e/s. Annealing the diamond at 660-degrees-C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.

引用

页码：952 / 954

页数：3

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