HIGH-CONDUCTANCE, LOW-LEAKAGE DIAMOND SCHOTTKY DIODES

被引：21
|
作者：
GEIS, MW [1 ]
EFREMOW, NN [1 ]
VONWINDHEIM, JA [1 ]
机构：
[1] KOBE STEEL USA INC, CTR ELECTR MAT, RES TRIANGLE PK, NC 27709 USA
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期
关键词：
D O I：
10.1063/1.109855
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H-2, or O2 result in high surface leakage, while plasmas formed from N2 Or from CF4 with 8.5% O2 result in total leakage < 1000 e/s. Annealing the diamond at 660-degrees-C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.
引用
收藏
页码：952 / 954
页数：3
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