INFLUENCE OF GATE VOLTAGE ON THE TRANSPORT-PROPERTIES OF SUPERCONDUCTOR 2DEG SYSTEMS

被引：13

作者：

LENSSEN, KMH ^{[1
]}

WESTERLING, LA ^{[1
]}

HARMANS, CJPM ^{[1
]}

MOOIJ, JE ^{[1
]}

LEYS, MR ^{[1
]}

VANDERVLEUTEN, W ^{[1
]}

WOLTER, JH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1994年 / 305卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)90939-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly transmissive, superconducting contacts of mum-scale have been made to the two-dimensional electron ps in GaAs/AlGaAs heterostructures, in combination with lateral gate structures. We present results of resistance measurements at T almost-equal-to 10 mK on a sample with a quantum point contact between two superconducting Sn/Ti contacts. New effects due to phase-coherent Andreev reflection have been observed. The conductance is found to be quantized with enhanced steps > 2e2/h, which is attributed to Andreev reflection. At zero gate voltage an enhancement of weak localization by Andreev reflection has been measured for the first time, while at a higher gate voltage indications of an excess conductance due to reflectionless tunneling have been found.

引用

页码：476 / 479

页数：4

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