ION-IMPLANTATION

被引：0
|
作者：
LANGOUCHE, G
机构：
来源：
HYPERFINE INTERACTIONS | 1991年 / 68卷 / 1-4期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
The extreme sensitivity of Mossbauer Spectroscopy to the local atomic and electronic configuration around ion implanted Mossbauer probes is demonstrated in a number of recent defect configuration studies in semiconductors and metals. A surge of interest is observed towards Mossbauer studies on high dose implantations connected with materials research: recent studies are reviewed dealing with ion beam synthesis, ion beam modification and ion beam mixing of materials.
引用
收藏
页码：95 / 106
页数：12
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