METALLIZATION OF MO-CLUSTER COMPOUND GA0.5MO2S4 AT 38 GPA

被引：4

作者：

ASANO, M ^{[1
]}

TANAKA, R ^{[1
]}

ENDO, S ^{[1
]}

WADA, S ^{[1
]}

NOGUCHI, S ^{[1
]}

OKUDA, K ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1990年 / 59卷 / 06期

关键词：

Ga0.5Mo2S4; high pressure; metallization; Mo-cluster;

D O I：

10.1143/JPSJ.59.2179

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electric resistance of Ga0.5Mo2S4 containing tetrahedral Mo-clusters was measured at high pressure up to 42 GPa and low temperature down to 2 K. The temperature coefficient of the resistance changed from negative to positive at 38 GPa, which indicates that metallization was induced with vanishing of the energy gap. © 1990, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：2179 / 2182

页数：4

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