MODELING DC CHARACTERISTICS OF GAAS-MESFET DEVICES USING A SIMPLE AND ACCURATE ANALYTIC TOOL

被引：1

作者：

IBRAHIM, SA

ELRABAIE, S

机构：

[1] Faculty of Electronic Engineering Menqfia University, Menouf

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 22期

关键词：

Gallium arsenide; materials; Modelling; Semiconductor devices and;

D O I：

10.1049/el:19901218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple equation that relates the drain current to the gate and source voltages of GaAs MESFET devices is presented. The proposed equation covers the entire Ids/Vds characteristics with no limitations. The parameters of the equation are evaluated easily using simple analytic tools without optimisation. Results show that the proposed formula gives accurate fitting results compared with the most popular used formula (the Curtice equation). Typical CPU times for evaluating the modelling parameters for a NEC71000 device using the two models are in the ratio of 1:50. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1892 / 1893

页数：2

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