SURFACE PASSIVATION AND BARRIER HEIGHT ENHANCEMENT OF N-TYPE IN0.53GA0.47AS SCHOTTKY-BARRIER PHOTODIODES

被引：0
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作者：
LEE, DH
LI, SS
机构：
来源：
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：174 / 179
页数：6
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