TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS

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作者：
WU, CY
CHEN, CF
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 07期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：1590 / 1602
页数：13
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