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- [21] Quantum confined stark effect and optical absorption in AlxGa1-xAs/GaAs/AlxGa1-xAs single quantum wellPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 194 (02): : 547 - 562Panda, SPanda, BKFung, SBeling, CD
- [22] PHOTOCONDUCTIVITY ON GAAS-ALXGA1-XAS HETEROSTRUCTURESSURFACE SCIENCE, 1984, 142 (1-3) : 406 - 411STEIN, DEBERT, GVONKLITZING, KWEIMANN, G
- [23] DEPENDENCE OF RESONANT TUNNELING CURRENT ON AL MOLE FRACTIONS IN ALXGA1-XAS-GAAS-ALXGA1-XAS DOUBLE BARRIER STRUCTURESAPPLIED PHYSICS LETTERS, 1987, 50 (21) : 1503 - 1505TSUCHIYA, MSAKAKI, H
- [24] IDENTIFICATION OF MIDGAP LEVELS IN MOLECULAR-BEAM EPITAXIAL ALXGA1-XAS AND GAASJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A2 - A2SPENCER, MGKENNEDY, TAMAGNO, R
- [25] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XASJOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287ILEGEMS, M
- [26] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123CHO, AYPANISH, MB
- [27] COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3760 - 3764MIHARA, MNOMURA, YMANNOH, MYAMANAKA, KNARITSUKA, SSHINOZAKI, KYUASA, T
- [28] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234DRUMMOND, TJMORKOC, HHESS, KCHO, AY
- [29] Looking for the maximum low-temperature conductivity in selectively doped AlxGa1-xAs-GaAs-AlxGa1-xAs double heterojunctionsJOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (30) : L421 - L426Simserides, CDTriberis, GP
- [30] MAGNETOOPTICAL STUDIES OF GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYPHYSICAL REVIEW B, 1987, 35 (09): : 4515 - 4518REYNOLDS, DCBAJAJ, KKLITTON, CWGREENE, RLYU, PWPENG, CKMORKOC, H