THEORETICAL-STUDY OF DYNAMICS OF TYPE-II TUNNEL-DIODES

被引：2
|
作者：
HUNG, KM [1 ]
FANG, TN [1 ]
CHEN, CJ [1 ]
CHANG, C [1 ]
WU, GY [1 ]
机构：
[1] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 07期
关键词：
D O I：
10.1016/0038-1098(94)00392-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We apply Green's function method, within a two-band model including the coupling between the conduction and light-hole bands, to Type-II tunnel diodes with resonant interband tunneling. Our model is suitable for studying dynamical responses, and is applied to the InAs/AlSb/GaSb/AlSb/InAs structure. In particular, we present results important for device applications, e.g., d.c. characteristics and a.c. admittances.
引用
收藏
页码：625 / 628
页数：4
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