SPIN EFFECTS ON OSCILLATORY MAGNETORESISTANCES IN CDX HG1-X TE

被引：13
|
作者：
SUIZU, K [1 ]
NARITA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN SCI,DEPT MAT PHYS,TOYONAKA,OSAKA,JAPAN
来源：
PHYSICS LETTERS A | 1973年 / A 43卷 / 04期
关键词：
D O I：
10.1016/0375-9601(73)90340-X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：353 / 355
页数：3
相关论文
共 50 条
  • [21] Mercury vacancies as divalent acceptors in Hg y Te1-y /Cd x Hg1-x Te structures with quantum wells
    Kozlov, D. V.
    Rumyantsev, V. V.
    Morozov, S. V.
    Kadykov, A. M.
    Fadeev, M. A.
    Varavin, V. S.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    Gavrilenko, V. I.
    Teppe, F.
    SEMICONDUCTORS, 2016, 50 (12) : 1662 - 1668
  • [22] The influence of hydrogenation on the electrical properties of the Cd x Hg1-x Te epitaxial structures
    Varavin, V. S.
    Sidorov, G. Yu.
    Garifullin, M. O.
    Vishnyakov, A. V.
    Sidorov, Yu. G.
    SEMICONDUCTORS, 2011, 45 (03) : 397 - 402
  • [23] Structural Properties of Cd x Hg1-x Te Solid-Solution Nanoparticles
    Sredin, V. G.
    Nikiforov, V. N.
    Zagarskikh, V. I.
    TECHNICAL PHYSICS LETTERS, 2017, 43 (12) : 1057 - 1059
  • [24] Low-frequency optical lattice vibrations in Hg1-x Cd x Te alloys
    Kozyrev, S. P.
    PHYSICS OF THE SOLID STATE, 2008, 50 (11) : 2164 - 2169
  • [25] Lattice dynamical properties of MnTe, HgTe and their mixed semiconductor Mn x Hg1-x Te
    Kushwaha, A. K.
    BULLETIN OF MATERIALS SCIENCE, 2015, 38 (07) : 1765 - 1769
  • [26] Cd x Hg1-x Te-based photodetector with the spectral characteristic controlled by the voltage
    Ismailov, N. J.
    SEMICONDUCTORS, 2009, 43 (03) : 379 - 381
  • [27] Combined adsorption of ammonia and oxygen on the surface of solid solutions of Cd x Hg1-x Te
    Fedyaeva, O. A.
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2012, 86 (03) : 447 - 451
  • [28] Exploring the Optical Properties of Hg1-x Cdx Se Films Using IR-Spectroscopic Ellipsometry
    Peiris, F. C.
    Brill, G.
    Doyle, Kevin
    VanMil, Brenda
    Myers, Thomas H.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (08) : 3056 - 3059
  • [29] History of the "Detector Materials Engineering" Crystal Growth Process for Bulk Hg1-x Cd x Te
    Higgins, W. M.
    Nelson, D. A.
    Roy, R. G.
    Murosako, R. P.
    Lancaster, R. A.
    Tower, J.
    Norton, P.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3320 - 3330
  • [30] Ion implantation into heteroepitaxial Cd x Hg1-x Te grown by molecular-beam epitaxy
    Voitsekhovskii, A. V.
    Grigor'ev, D. V.
    Talipov, N. Kh.
    RUSSIAN PHYSICS JOURNAL, 2008, 51 (10) : 1001 - 1015
12345