THRESHOLD CURRENTS OF 1.2-1.55 MU-M P-SUBSTRATE BURIED CRESCENT LASER-DIODES

被引：5

作者：

KAKIMOTO, S

TAKEMOTO, A

SAKAKIBARA, Y

NAKAJIMA, Y

FUJIWARA, M

机构：

[1] Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, Itami

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 07期

关键词：

D O I：

10.1109/3.142547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P-substrate buried crescent (PBC) laser diodes whose wavelength ranged from 1.2 to 1.55-mu-m have been fabricated. The threshold currents as low as 10 mA have been obtained in this wavelength range experimentally. The calculated threshold currents of 13, 13, and 14 mA at 1.2, 1.3, and 1.55-mu-m almost coincide with the measured values.

引用

页码：1631 / 1635

页数：5

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