WAVELENGTH DEPENDENCE OF CHARACTERISTICS OF 1.2-1.55 MU-M INGAASP/INP P-SUBSTRATE BURIED CRESCENT LASER-DIODES

被引：23
|
作者：
KAKIMOTO, S [1 ]
TAKEMOTO, A [1 ]
SAKAKIBARA, Y [1 ]
NAKAJIMA, Y [1 ]
FUJIWARA, M [1 ]
NAMIZAKI, H [1 ]
HIGUCHI, H [1 ]
YAMAMOTO, Y [1 ]
机构：
[1] MITSUBISHI ELECT CORP,KITA ITAMI WORKS,ITAMI,HYOGO 664,JAPAN
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 01期
关键词：
D O I：
10.1109/3.90
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：29 / 35
页数：7
相关论文
共 50 条
  • [1] THRESHOLD CURRENTS OF 1.2-1.55 MU-M P-SUBSTRATE BURIED CRESCENT LASER-DIODES
    KAKIMOTO, S
    TAKEMOTO, A
    SAKAKIBARA, Y
    NAKAJIMA, Y
    FUJIWARA, M
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (07) : 1631 - 1635
  • [2] Temperature dependence of threshold currents of 1.55 μm p-substrate buried crescent laser diodes
    Kakimoto, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9A): : 6079 - 6083
  • [3] INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH
    OOMURA, E
    HIGUCHI, H
    SAKAKIBARA, Y
    HIRANO, R
    NAMIZAKI, H
    SUSAKI, W
    IKEDA, K
    FUJIKAWA, K
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) : 866 - 874
  • [4] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER EMITTING AT 1.55 MU-M
    TAKAHASHI, S
    SAITO, H
    IWANE, G
    ELECTRONICS LETTERS, 1980, 16 (24) : 922 - 923
  • [5] CRESCENT INGAASP MESA SUBSTRATE BURIED-HETEROSTRUCTURE LASERS AT 1.55 MU-M
    FELDMAN, RD
    AUSTIN, RF
    ORON, M
    ELECTRONICS LETTERS, 1984, 20 (19) : 795 - 796
  • [6] LOW-RESISTANCE 1.55 MU-M INGAASP/INP SEMIINSULATING BURIED HETEROSTRUCTURE LASER-DIODES USING A MULTILAYER CONTACT STRUCTURE
    MATSUMOTO, S
    IGA, R
    KADOTA, Y
    YAMAMOTO, M
    FUKUDA, M
    KISHI, K
    ITAYA, Y
    ELECTRONICS LETTERS, 1995, 31 (11) : 882 - 883
  • [7] HIGH-POWER HIGH-RELIABILITY OPERATION OF 1.3-MU-M P-SUBSTRATE BURIED CRESCENT LASER-DIODES
    NAKAJIMA, Y
    HIGUCHI, H
    KOKUBO, Y
    SAKAKIBARA, Y
    KAKIMOTO, S
    NAMIZAKI, H
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) : 1263 - 1268
  • [8] 1.3 MU-M INGAASP/INP DISTRIBUTED-FEEDBACK P-SUBSTRATE PARTIALLY INVERTED BURIED-HETEROSTRUCTURE LASER DIODE
    TAKEMOTO, A
    SAKAKIBARA, Y
    NAKAJIMA, Y
    FUJIWARA, M
    KAKIMOTO, S
    NAMIZAKI, H
    SUSAKI, W
    ELECTRONICS LETTERS, 1987, 23 (11) : 546 - 547
  • [9] INTERNAL LOSS OF INGAASP-INP BURIED CRESCENT (LAMDA = 1.3 MU-M) LASER
    HIGUCHI, H
    NAMIZAKI, H
    OOMURA, E
    HIRANO, R
    SAKAKIBARA, Y
    SUSAKI, W
    FUJIKAWA, K
    APPLIED PHYSICS LETTERS, 1982, 41 (04) : 320 - 321
  • [10] 1.55 MU-M INGAASP LOW-THRESHOLD BURIED-CRESCENT INJECTION-LASER
    CHENG, WH
    PERILLO, L
    FOROUHAR, S
    KIM, OK
    JIANG, CL
    SHEEM, SK
    ELECTRONICS LETTERS, 1985, 21 (19) : 832 - 834
12345