SURFACE ELECTRONIC-STRUCTURE OF INAS(110)

被引：17
|
作者：
ANDERSSON, CBM
ANDERSEN, JN
PERSSON, PES
KARLSSON, UO
机构：
[1] UNIV LUND,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN
[2] LINKOPING UNIV,NATL SUPERCOMP CTR,S-58183 LINKOPING,SWEDEN
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.47.2427
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.
引用
收藏
页码：2427 / 2430
页数：4
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