SMOOTH AND VERTICAL INP REACTIVE ION-BEAM ETCHING WITH CL2 ECR PLASMA

被引:18
|
作者
YOSHIKAWA, T [1 ]
KOHMOTO, S [1 ]
OZAKI, M [1 ]
HAMAO, N [1 ]
SUGIMOTO, Y [1 ]
SUGIMOTO, M [1 ]
ASAKAWA, K [1 ]
机构
[1] OPTOELECTR TECHNOL RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期
关键词
REACTIVE ION BEAM ETCHING; INP;
D O I
10.1143/JJAP.31.L655
中图分类号
O59 [应用物理学];
学科分类号
摘要
Smooth and vertical InP reactive ion beam etching has been achieved with electron cyclotron resonance Cl2 plasma at high ion energy (greater-than-or-equal-to 900 eV), high temperature (230-degrees-C) and relatively low Cl2 pressure (approximately 10(-4)Torr). Smooth etching of an InP system by Cl2 plasma has often been reported as difficult compared to that of thc GaAs system due to low volatility of reactive products such as InClx. In the present work, precise control of incident ion energy and Cl2 pressure contributed to the improvement of both the vertical profile and bottom smooth surface under high substrate temperature (approximately 200-degrees-C). Vertical profiles were easily achieved even at high temperatures by varying the Cl2 pressure. While etching conditions suitable for vertical wall-formation were maintained, surface morphology was drastically improved by increasing ion energy above 900 eV and the bottom roughness became less than 100 nm at 1450 eV.
引用
收藏
页码:L655 / L657
页数:3
相关论文
共 50 条
  • [21] Vertical and smooth, etching of InP by Cl2/CH4/Ar inductively coupled plasma at room temperature
    Sun, CZ
    Zhou, JB
    Xiong, B
    Wang, J
    Luo, Y
    CHINESE PHYSICS LETTERS, 2003, 20 (08) : 1312 - 1314
  • [22] Characterization of etching damage in Cl2/H2-reactive-ion-etching of GaInAs/InP heterostructure
    Nunoya, N
    Nakamura, M
    Tamura, M
    Arai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6942 - 6946
  • [23] REACTIVE ION-BEAM ETCHING OF ZNSE USING CL2GAS
    SAITOH, T
    YOKOGAWA, T
    MUTOH, K
    NARUSAWA, T
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A51 - A54
  • [24] CHARACTERISTICS OF GA+ FOCUSED ION-BEAM ASSISTED CL2 ETCHING OF GAAS
    TANEYA, M
    SUGIMOTO, Y
    HIDAKA, H
    AKITA, K
    PROCEEDINGS OF THE 7TH SYMPOSIUM ON ION BEAM TECHNOLOGY, 1989, : 47 - 52
  • [25] PLASMA CHEMICAL VIEW OF MAGNETRON AND REACTIVE ION ETCHING OF SI WITH CL2
    ONO, K
    OOMORI, T
    HANAZAKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (10): : 2229 - 2235
  • [26] Influence of Ge and Si on reactive ion etching of GaN in Cl2 plasma
    Urushido, Tatsuhiro
    Yoshida, Harumasa
    Miyake, Hideto
    Hiramatsu, Kazumasa
    1600, Japan Society of Applied Physics (41):
  • [27] Influence of Ge and Si on reactive ion etching of GaN in Cl2 plasma
    Urushido, T
    Yoshida, H
    Miyake, H
    Hiramatsu, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (1AB): : L31 - L33
  • [28] COMPARISON OF LUMINESCENCE FROM INP PROCESSED BY REACTIVE ION-BEAM ETCHING
    TADOKORO, T
    KOYAMA, F
    IGA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (02): : 242 - 243
  • [29] A STUDY ON ETCHING PARAMETERS OF A REACTIVE ION-BEAM ETCH FOR GAAS AND INP
    TADOKORO, T
    KOYAMA, F
    IGA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (03): : 389 - 392
  • [30] MEASUREMENT OF SIDEWALL ROUGHNESS OF INP ETCHED BY REACTIVE ION-BEAM ETCHING
    MATSUTANI, A
    KOYAMA, F
    IGA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6737 - 6738