DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS

被引：93
|
作者：
OSBURN, CM
ORMOND, DW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 05期
关键词：
D O I：
10.1149/1.2404269
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：597 / +
页数：1
相关论文
共 50 条
  • [21] Defect production, degradation, and breakdown of silicon dioxide films
    Dimaria, DJ
    SOLID-STATE ELECTRONICS, 1997, 41 (07) : 957 - 965
  • [22] Defect production, degradation, and breakdown of silicon dioxide films
    IBM Thomas J. Watson Research Cent, Yorktown Heights, United States
    Solid State Electron, 7 (957-965):
  • [23] Breakdown of thin gate silicon dioxide films - a review
    Universitat Autonoma de Barcelona, Bellaterra, Spain
    Microelectron Reliab, 7-8 (871-905):
  • [24] Breakdown of thin gate silicon dioxide films - A review
    Nafria, M
    Sune, J
    Aymerich, X
    MICROELECTRONICS RELIABILITY, 1996, 36 (7-8) : 871 - 905
  • [25] TIME-DEPENDENT BREAKDOWN OF SILICON DIOXIDE FILMS
    RAIDER, SI
    APPLIED PHYSICS LETTERS, 1973, 23 (01) : 34 - 36
  • [26] A study of trap profiles in thin silicon dioxide films at dielectric breakdown using percolation model
    Uno, A
    Ishida, A
    Okada, K
    Sakura, T
    Deguchi, K
    Kamakura, Y
    Taniguchi, K
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 331 - 336
  • [27] Influence of traps in silicon dioxide on the breakdown of MOS structures
    Aleksandrov, O. V.
    SEMICONDUCTORS, 2017, 51 (08) : 1062 - 1066
  • [28] Influence of traps in silicon dioxide on the breakdown of MOS structures
    O. V. Aleksandrov
    Semiconductors, 2017, 51 : 1062 - 1066
  • [29] Modeling the breakdown spots in silicon dioxide films as point contacts
    Dept. d'Enginyeria Electronica, Univ. Autònoma de Barcelona, 08193-Bellaterra, Spain
    Appl Phys Lett, 7 (959-961):
  • [30] Hot hole induced breakdown of thin silicon dioxide films
    Tomita, T
    Utsunomiya, H
    Kamakura, Y
    Taniguchi, K
    APPLIED PHYSICS LETTERS, 1997, 71 (25) : 3664 - 3666
12345