DUAL SPECIES ION-IMPLANTATION IN GAAS

被引：9
|
作者：
INADA, T [1 ]
KATO, S [1 ]
OHKUBO, T [1 ]
HARA, T [1 ]
机构：
[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期
关键词：
D O I：
10.1080/00337578008209235
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：91 / 96
页数：6
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