DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM

被引：304

作者：

PRINCE, MB

机构：

来源：

PHYSICAL REVIEW | 1953年 / 92卷 / 03期

关键词：

D O I：

10.1103/PhysRev.92.681

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：681 / 687

页数：7

共 50 条

[41] LONGITUDINAL MAGNETORESISTANCE IN SUPERLATTICE SEMICONDUCTORS .1.
POLYANOVSKII, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (10): : 1150 - 1153
[42] OPTOELECTRONICS .1. A NEW ERA FOR SEMICONDUCTORS
HAENICHE.JC
ELECTRONIC ENGINEER, 1970, 29 (07): : 40 - &
[43] INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1.
FRESE, KW
MADOU, MJ
MORRISON, SR
JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (24): : 3172 - 3178
[44] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1.
JAROS, M
ROSS, SF
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762
[45] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS .1. SILICON
PEARTON, SJ
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1994, 8 (09): : 1093 - 1158
[46] Millimeter Waves, Semiconductors and Systems - 1.
Parzich, E.
Nachrichten Elektronik, 1979, 33 (03): : 77 - 80
[47] DRIFT TRANSPORT OF RADIATION IN SEMICONDUCTORS
MALYUTENKO, VK
PIPA, VI
YABLONOVSKII, EI
BOLGOV, SS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 262 - 265
[48] THE MEASUREMENT OF DRIFT MOBILITY IN SEMICONDUCTORS
LAWRANCE, R
GIBSON, AF
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (396): : 994 - 995
[49] THERMODYNAMIC INVESTIGATION ON (A TRANSITION-METAL + GERMANIUM) .1. (PLATINUM + GERMANIUM) AND (PALLADIUM + GERMANIUM) ALLOYS
CASTANET, R
JOURNAL OF CHEMICAL THERMODYNAMICS, 1982, 14 (07): : 639 - 647
[50] RESISTIVITIES AND HOLE MOBILITIES IN VERY HEAVILY DOPED GERMANIUM
TRUMBORE, FA
TARTAGLIA, AA
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1511 - 1511

← 1 2 3 4 5 →