LOCALIZED THINNING OF SEMICONDUCTOR NANOSTRUCTURES FOR CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY

被引：0
|
作者：
VIEU, C
PEPIN, A
BENASSAYAG, G
GIERAK, J
LADAN, FR
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two new productive techniques, one combining electron lithography and reactive ion etching and the other based on focused ion beam micromachining to thin high quality cross-sectional TEM samples are proposed. Electron transparent areas are generated with a high degree of localization, within 0.1 mu m, over distances of several mm in GaAs/GaAlAs heterostructures. TEM observations demonstrate that no artefacts are introduced during the preparation and different conditions of illumination are achievable.
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页码：385 / 390
页数：6
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