HIGH-VOLTAGE THIN-FILM TRANSISTORS MANUFACTURED WITH PHOTOLITHOGRAPHY AND WITH TA2O5 AS THE GATE OXIDE

被引:26
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作者
KALLFASS, T
LUEDER, E
机构
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D O I
10.1016/0040-6090(79)90469-3
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T [工业技术];
学科分类号
08 ;
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页码:259 / 264
页数:6
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