CHARGE NEUTRALIZATION IN ION IMPLANTERS

被引：7
|
作者：
SMATLAK, DL
MACK, ME
MEHTA, S
机构：
[1] Varian Ion Implant Systems, Gloucester
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期
关键词：
D O I：
10.1016/0168-583X(94)00447-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The control of wafer charging in high current implantation is the key to maintaining high yield as gate oxide thicknesses decrease. The effectiveness of different charge neutralization techniques and different Faraday configurations have been evaluated using an in situ charge sensor in the Varian E1000 high current ion implanter. The in situ measurements also aid in understanding the charging process and underscore the plasma nature of the ion beam.
引用
收藏
页码：22 / 29
页数：8
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