IR SPECTROSCOPY AND X-RAY TOPOGRAPHY STUDY OF ANNEALING OF PROTON BOMBARDED SILICON

被引：16
|
作者：
TATARKIEWICZ, J
WIETESKA, K
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期
关键词：
D O I：
10.1002/pssa.2210660252
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：K101 / &
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