A STUDY OF RADIATION EFFECTS ON REOXIDIZED NITRIDED-OXIDE MOSFETS, INCLUDING EFFECTS ON MOBILITY

被引：6
|
作者：
MALLIK, A
VASI, J
CHANDORKAR, AN
机构：
[1] Department of Electrical Engineering Indian Institute of Technology Bombay
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期
关键词：
D O I：
10.1016/0038-1101(93)90179-T
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：1359 / 1361
页数：3
相关论文
共 50 条
  • [31] EFFECTS OF DYNAMIC STRESSING ON NITRIDED AND REOXIDIZED-NITRIDED CHEMICAL-VAPOR-DEPOSITED GATE OXIDES
    HWANG, HS
    TING, WC
    KWONG, DL
    LEE, J
    BUHROW, L
    BOWLING, RA
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) : 568 - 570
  • [32] RADIATION EFFECTS IN NITRIDED OXIDES
    TERRY, FL
    AUCOIN, RJ
    NAIMAN, ML
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 191 - 193
  • [33] RADIATION AND HIGH-FIELD INDUCED INTERFACE STATE GENERATION IN MOS STRUCTURES WITH MODIFIED NITRIDED-OXIDE
    SHAPPIR, J
    ROTER, T
    LEVINSON, J
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 219 - 222
  • [34] ELECTRON-SPIN-RESONANCE STUDY OF RADIATION-INDUCED POINT-DEFECTS IN NITRIDED AND REOXIDIZED NITRIDED OXIDES
    YOUNT, JT
    LENAHAN, PM
    DUNN, GJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2211 - 2219
  • [35] Modeling of radiation effects in MOSFETs
    Banqueri, J.
    Carvajal, M. A.
    Palma, A. J.
    PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013), 2013, : 33 - 36
  • [36] Simulation of radiation effects in MOSFETs
    Ekbote, S
    Tambe, D
    Zaman, P
    Dangat, HK
    Khare, M
    Sinha, P
    Rodd, S
    Bukhanwala, N
    Vasi, J
    Sharma, DK
    Das, A
    SEMICONDUCTOR DEVICES, 1996, 2733 : 57 - 59
  • [37] A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
    Ruiz, Francisco J. Garcia
    Godoy, Andres
    Gamiz, Francisco
    Sampedro, Carlos
    Donetti, Luca
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3369 - 3377
  • [38] INTERFACE-STATE GENERATION UNDER RADIATION AND HIGH-FIELD STRESSING IN REOXIDIZED NITRIDED OXIDE MOS CAPACITORS
    BHAT, N
    VASI, J
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2230 - 2235
  • [39] MOBILITY IMPROVEMENT OF N-MOSFETS WITH NITRIDED GATE OXIDE BY BACKSURFACE AR+ BOMBARDMENT
    LAI, PT
    XU, Z
    LI, GQ
    NG, WT
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (08) : 354 - 356
  • [40] Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
    Lai, PT
    Xu, JP
    Lo, HB
    Cheng, YC
    MICROELECTRONICS RELIABILITY, 1998, 38 (10) : 1585 - 1589
12345