OPTICALLY DETECTED MAGNETIC-RESONANCE AT 3 AND 16 GHZ IN INP-ZN

A self-consistent model for the competing antisite-acceptor-pair and shallow donor-acceptor-pair recombination process in InP:Zn is presented. The model is consistent with the optically detected magnetic-resonance (ODMR) measurements for electron-spin resonance in both the shallow donor and antisite states if one assumes thermalized shallow donor and partially unthermalized antisite states. This assumption is supported by the measured photoluminescence decay and the modulation frequency dependence of the ODMR signal amplitude. The quantitative estimates for the ODMR signal magnitudes indicate that the electron-spin resonance not only affects the recombination rates but may also change the pair-formation probabilities. The g values and hyperfine constants measured for the P(In) resonance and the shallow-donor (conduction-band) resonance are in good agreement with values reported by other groups. An additional resonance (g = 1.85 +/- 0.15) was observed and tentatively assigned to a deep nonradiative center coupled to the P(In) antisite (0.87 eV) luminescence. The exact nature of this center has not been determined.