FUNDAMENTALS OF MEASUREMENT - TECHNIQUES AND PRACTICES - DOWNIE,NM

被引：0
|
作者：
RHUM, GJ
机构：
来源：
EDUCATIONAL FORUM | 1960年 / 24卷 / 02期
关键词：
D O I：
10.1080/00131726009339526
中图分类号：
G40 [教育学];
学科分类号：
040101 ; 120403 ;
摘要：
引用
收藏
页码：242 / 243
页数：2
相关论文
共 50 条
  • [41] Measurement Fundamentals An Introduction
    Machin, Graham
    MEASUREMENT & CONTROL, 2014, 47 (10): : 301 - 301
  • [42] The fundamentals of risk measurement
    The Mathematical Intelligencer, 2005, 27 (2) : 83 - 83
  • [43] Fundamentals of Educational Measurement
    Buswell, G. T.
    ELEMENTARY SCHOOL JOURNAL, 1923, 23 (07): : 551 - 552
  • [44] Fundamentals of stress measurement
    Glass Int, (47):
  • [45] THE FUNDAMENTALS OF COLOR MEASUREMENT
    MacAdam, D. L.
    JOURNAL OF THE SOCIETY OF MOTION PICTURE ENGINEERS, 1938, 31 (04): : 343 - 350
  • [46] FUNDAMENTALS OF BIOPOTENTIALS AND THEIR MEASUREMENT
    KAHN, AR
    SATTLER, FP
    AMERICAN JOURNAL OF PHARMACEUTICAL EDUCATION, 1964, 28 (05) : 805 - &
  • [47] High-Speed Photography and Digital Optical Measurement Techniques for Geomaterials: Fundamentals and Applications
    Xing, H. Z.
    Zhang, Q. B.
    Braithwaite, C. H.
    Pan, B.
    Zhao, J.
    ROCK MECHANICS AND ROCK ENGINEERING, 2017, 50 (06) : 1611 - 1659
  • [48] High-Speed Photography and Digital Optical Measurement Techniques for Geomaterials: Fundamentals and Applications
    H. Z. Xing
    Q. B. Zhang
    C. H. Braithwaite
    B. Pan
    J. Zhao
    Rock Mechanics and Rock Engineering, 2017, 50 : 1611 - 1659
  • [49] Transmission electron diffraction techniques for NM scale strain measurement in semiconductors
    Vanhellemont, J
    Janssens, KGF
    Frabboni, S
    Smeys, P
    Balboni, R
    Armigliato, A
    SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES, 1996, 405 : 435 - 446
  • [50] Transmission electron diffraction techniques for nm scale strain measurement in semiconductors
    Vanhellemont, J
    Janssens, KGF
    Frabboni, S
    Smeys, P
    Balboni, R
    Armigliato, A
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 479 - 490
12345