PREPARATION AND PROPERTIES OF VAPOR-PHASE-EPITAXIAL-GROWN GAINASP

被引：15
|
作者：
ENDA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 11期
关键词：
D O I：
10.1143/JJAP.18.2167
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2167 / 2168
页数：2
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