REQUIREMENTS ON RESIST LAYERS IN DEEP-ETCH SYNCHROTRON RADIATION LITHOGRAPHY

被引：35
|
作者：
MOHR, J
EHRFELD, W
MUNCHMEYER, D
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.584067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2264 / 2267
页数：4
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