共 50 条
- [41] ELECTROPHYSICAL PROPERTIES OF INSULATING GA1-XALXAS SOLID-SOLUTION LAYERS FORMED BY THE MOC HYDRIDE METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (04): : 378 - 383
- [42] THE DEVIATION FROM CREEP BY VISCOUS GLIDE IN SOLID-SOLUTION ALLOYS AT HIGH STRESSES .1. CHARACTERISTICS OF THE DRAGGING STRESS ACTA METALLURGICA, 1984, 32 (11): : 1991 - 1999
- [43] SYNTHESIS AND PROPERTIES OF (1-X)PZN-XBZN SOLID-SOLUTION COMPOUNDS BY LIQUID-EVAPORATION METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5407 - 5411
- [44] Preparation and luminescence of crystallized Ba1-XSrXMoO4 solid-solution films by an electrochemical method at room temperature JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1229 - L1231
- [47] Method for determining the stoichiometric composition of a mercury cadmium telluride solid solution from capacitance-voltage characteristics Semiconductors, 2001, 35 : 525 - 528