RBS ANALYSIS OF PHOSPHORUS-GETTERING OF GOLD AND COPPER IN SILICON

被引：0

作者：

HARTITI, B ^{[1
]}

AMZIL, H ^{[1
]}

SAYEH, D ^{[1
]}

HAGEALI, M ^{[1
]}

MULLER, JC ^{[1
]}

SIFFERT, P ^{[1
]}

机构：

[1] FAC SCI RABAT,RABAT,MOROCCO

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1994年 / 19卷 / 7-8期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we will present results showing that Rutherford Back-Scattering (RBS) is particularly efficient to study the extrinsic gettering of Au and Cu by phosphorus diffusion in a classical or rapid thermal furnace. We have found bu RBS measurement that an accumulation of Au and Cu in the phosphorus doped region is clearly evidenced after classical or rapid thermal diffusion of phosphorus from a spin-on deposited silicon glass source in the temperature range 950-1050 degrees C for typical durations of 15 min and 25 sec respectively, confirming the existence of a classical as well as a rapid thermal gettering effect.

引用

页码：483 / 486

页数：4

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