RBS ANALYSIS OF PHOSPHORUS-GETTERING OF GOLD AND COPPER IN SILICON

In this work, we will present results showing that Rutherford Back-Scattering (RBS) is particularly efficient to study the extrinsic gettering of Au and Cu by phosphorus diffusion in a classical or rapid thermal furnace. We have found bu RBS measurement that an accumulation of Au and Cu in the phosphorus doped region is clearly evidenced after classical or rapid thermal diffusion of phosphorus from a spin-on deposited silicon glass source in the temperature range 950-1050 degrees C for typical durations of 15 min and 25 sec respectively, confirming the existence of a classical as well as a rapid thermal gettering effect.