INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM

被引：0
|
作者：
ABDURAKHMANOVA, SN [1 ]
DOSTKHODZHAEV, T [1 ]
MASHOVETS, TV [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST, LENINGRAD, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 09期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1229 / 1230
页数：2
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