共 50 条
- [41] ELECTRICAL PROPERTIES OF P-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1959, 1 (04): : 514 - 515
- [42] TRANSPORT PHENOMENA IN HEAVILY DOPED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1005 - 1007
- [43] CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS PHYSICS LETTERS, 1963, 6 (02): : 143 - 145
- [44] TEMPERATURE DEPENDENCE OF THERMOELECTRIC POWER OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 912 - +
- [45] RESISTANCE OF P-TYPE INSB IN STRONG MAGNETIC FIELDS SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2014 - &
- [46] SCHOTTKY DIODES MADE OF COMPENSATED P-TYPE INP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 374 - 376
- [47] FIELD EFFECT IN COMPENSATED P-TYPE GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 997 - +
- [48] ELECTRICAL PROPERTIES OF COMPENSATED P-TYPE INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 227 - +
- [50] PROPERTIES OF P-TYPE INSB IN PULSED HIGH ELECTRIC FIELDS PHYSICAL REVIEW, 1960, 118 (02): : 474 - 477