INTERSUBBAND TRANSITIONS IN INGAAS/INP QUANTUM-WELLS STUDIED BY PHOTOMODULATION SPECTROSCOPY

被引：4
|
作者：
EHRENFREUND, E
OIKNINESCHLESINGER, J
GERSHONI, D
RITTER, D
PANISH, MB
HAMM, RA
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
来源：
SURFACE SCIENCE | 1992年 / 267卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)91177-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report a study of the infrared, photoinduced absorption in a nominally undoped, lattice-matched InGaAs/InP multi-quantum-well (MQW) structure. A clear photoinduced intersubband absorption band is observed and assigned to the n = 1 to n = 2 transition. Its dependence on the excitation (laser) intensity reveals a defect controlled recombination mechanism.
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页码：461 / 463
页数：3
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