METAL PRECIPITATES IN SILICON P-N JUNCTIONS

被引：281

|

作者：

GOETZBERGER, A

SHOCKLEY, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 10期

关键词：

D O I：

10.1063/1.1735455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1821 / 1824

页数：4

相关论文

共 50 条

[41] INVESTIGATION OF THE BARRIER CAPACITANCE OF DIFFUSED P-N JUNCTIONS IN SILICON
BERMAN, LS
SUBASHIEV, VK
SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1768 - 1770
[42] 2 CHEMICAL STAINS FOR MARKING P-N JUNCTIONS IN SILICON
WHORISKEY, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 867 - 868
[43] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS
GOETZBERGER, A
FINCH, RH
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &
[44] CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS
FULOP, W
SOLID-STATE ELECTRONICS, 1967, 10 (01) : 39 - &
[45] TEMPERATURE DEPENDENCE OF AVALANCHE CURRENT IN SILICON P-N JUNCTIONS
THOMSON, I
INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (04) : 397 - &
[46] VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON
GOETZBERGER, A
STEPHENS, C
JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2646 - &
[47] Characterization of oxygen related defects in silicon p-n junctions
Tejada, JAJ
Villanueva, JAU
Godoy, A
Gómez-Campos, FM
Rodríguez-Bolívar, S
Carceller, JE
2005 Spanish Conference on Electron Devices, Proceedings, 2005, : 37 - 40
[48] Breakdown electroluminescence spectra of silicon carbide p-n junctions
M. V. Belous
A. M. Genkin
V. K. Genkina
O. A. Guseva
Semiconductors, 1997, 31 : 169 - 172
[49] NONEQUILIBRIUM ELECTRON EMISSION FROM SILICON P-N JUNCTIONS
DYKMAN, IM
ZINGERMAN, YP
ISHCHUK, VA
MOROZOVSKII, VA
SOVIET PHYSICS-SOLID STATE, 1963, 4 (08): : 1478 - 1485
[50] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS
VANOVERSTRAETEN, R
DEMAN, H
SOLID-STATE ELECTRONICS, 1970, 13 (05) : 583 - +

← 1 2 3 4 5 →