HETEROSTRUCTURE BIPOLAR-TRANSISTOR EMPLOYING CARBON-DOPED BASE GROWN WITH TRIMETHYL-GA AND ARSINE

被引：10

作者：

KUO, TY ^{[1
]}

CHIU, TH ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

GOOSSEN, KW ^{[1
]}

FONSTAD, CG ^{[1
]}

REN, F ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 16期

关键词：

Bipolar devices; Doping; Semiconductor devices and materials;

D O I：

10.1049/el:19900812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The investigation of an AlGaAs/GaAs HBT in in which a heavily carbon doped base is grown by chemical beam epitaxy using trimethyl-Ga is reported. A planar technique which reduces surface recombination has been employed for selectively contacting the base region. A base width of 1000 A and a high doping level of 7 × 1019cm−3 is used. The sheet resistance of the base is less than 100Ω/□. This transistor has a maximum current gain of 25 at a current density of 1.3 × 103 A/cm2. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1260 / 1262

页数：3

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