共 50 条
- [42] HIGH BARRIER HEIGHT MIS DIODES ON N-INP USING PD, NI AND AU ON A CHEMICAL OXIDE ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 631 - 636
- [45] Formation of [Left Angle Bracket] 001 [Right Angle Bracket] -aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl Journal of Electroanalytical Chemistry, 1999, 473 (01): : 223 - 229
- [46] A mechanistic study of the influence of proton transfer processes on the behavior of thiol/disulfide redox couples JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (12): : 2239 - 2247
- [49] Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range Journal of Electronic Materials, 2019, 48 : 3169 - 3182
- [50] Characterization of SiOx/Si/SiOx coated n-InP facets of semiconductor lasers using spatially-resolved photoluminescence JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11): : 8007 - 8009