CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB

被引:64
|
作者
MARGARITONDO, G
ROWE, JE
BERTONI, CM
CALANDRA, C
MANGHI, F
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] UNIV MODENA,IST FIS,I-41100 MODENA,ITALY
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词
D O I
10.1103/PhysRevB.20.1538
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1538 / 1545
页数:8
相关论文
共 50 条
  • [21] Phonons at III-V (110) surfaces
    Schmidt, WG
    Bechstedt, F
    Srivastava, GP
    SURFACE SCIENCE, 1996, 352 : 83 - 88
  • [22] Phonons at III-V (110) surfaces
    Friedrich-Schiller-Universitat Jena, Jena, Germany
    Surface Science, 1996, 352-354 : 83 - 88
  • [23] ALLOYING TO III-V COMPOUND SURFACES
    BERNSTEIN, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (03) : 270 - 272
  • [24] Defects in III-V semiconductor surfaces
    Ebert, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (01): : 101 - 112
  • [25] Single Crystalline Particles Formation of InSb and GaSb III-V Type Semiconductor by Using Short Drop Tube Process
    Kawamura, Tadaharu
    Nagayama, Katsuhisa
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2015, 79 (08) : 419 - 421
  • [26] EFFECTS OF II-VI EPITAXY ON III-V SURFACES - A STUDY OF ZNSE ON GAAS
    OLEGO, DJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1193 - 1197
  • [27] IMPLANTATION IN GAAS AND OTHER III-V COMPOUNDS
    DAVIES, DE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (11): : 1339 - 1339
  • [28] Characterization of GaSb substrate wafers for MOCVD III-V antimonides
    Peng, RW
    Ding, YQ
    Xu, CM
    Wang, XG
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 417 - 420
  • [29] Properties of GaSb substrate wafers for MOCVD III-V antimonide
    Peng, Ruiwu
    Ding, Yongqing
    Xu, Chenmei
    Wang, Zhanguo
    Rare Metals, 1998, 17 (02): : 161 - 165
  • [30] GaSb (001): New adventures in III-V surface chemistry
    Bermudez, Victor M.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2014, 247