HETEROPHOTODIODES OF N-GAAS-P-ALXGA1-XAS TYPE

被引：0
|
作者：
AKHMEDOV, FA [1 ]
KOROLKOV, VI [1 ]
MAKUSHENKO, YM [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST, LENINGRAD, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：673 / 674
页数：2
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