Lateral Deformation of a Silicon Crystal Surface Structure Induced by Low-Fluence Ion-Beam Irradiation

被引：2
|
作者：
Guo, Xiaowei [1 ]
Momota, Sadao [2 ]
Nitta, Noriko [3 ]
Maeda, Kazuki [1 ]
机构：
[1] Kochi Univ Technol, Dept Intelligent Mech Engn, Kami City, Kochi 7828502, Japan
[2] Kochi Univ Technol, Sch Environm Sci & Engn, Kami City, Kochi 7828502, Japan
[3] Kochi Univ Technol, Res Inst, Ctr Nanotechnol, Kami City, Kochi 7828502, Japan
来源：
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2015年 / 13卷
关键词：
Ion implantation; Order-disorder phase transition; Radiation damage; Nano structure processing; Silicon; Lateral deformation;
D O I：
10.1380/ejssnt.2015.35
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The increasing importance of the volume expansion effect on crystalline materials induced by ion-beam irradiation has drawn much attention because of its applications. For example, the expansion effect is used as a good probe to investigate any crystalline-amorphous (c-a) phase change and/or damage. Because the expansion rate and its depth profile can be controlled by means of the irradiation parameters, such as fluence and energy, the deformation of structures on the micro-/nano-meter scale is expected. The fluence needed to achieve deformation is relatively low, and it is expected that irradiation-induced damage is reduced compared with that induced by conventional ion-beam fabrication. Therefore, this expansion effect is a potential method to improve the ion-beam technology employed to fabricate complicated 3-dimensional structures requested in actively developing industrial fields, such as MEMS/NEMS.
引用
收藏
页码：35 / 41
页数：7
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