ATOMIC-STRUCTURE OF THE METASTABLE C(4X4) RECONSTRUCTION OF SI(100)

被引:81
|
作者
UHRBERG, RIG [1 ]
NORTHRUP, JE [1 ]
BIEGELSEN, DK [1 ]
BRINGANS, RD [1 ]
SWARTZ, LE [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 16期
关键词
D O I
10.1103/PhysRevB.46.10251
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A c (4 X 4) reconstruction can be formed on the clean Si(100) surface by special surface treatment techniques. We have studied the atomic structure of this metastable phase, which is prepared by hydrogen exposure and annealing, using scanning tunneling microscopy and first-principles total-energy calculations. A new model is derived which has two types of surface dimers oriented parallel and perpendicular to the underlying 2 X 1 dimer rows. Our results are thus in disagreement with the missing dimer model which has earlier been proposed in the literature.
引用
收藏
页码:10251 / 10256
页数:6
相关论文
共 50 条
  • [41] X-ray photoelectron diffraction study of Si(001)c(4x4)-C surface
    Kosugi, R
    Sumitani, S
    Abukawa, T
    Takakuwa, Y
    Suzuki, S
    Sato, S
    Kono, S
    SURFACE SCIENCE, 1998, 412-13 : 125 - 131
  • [42] Structural studies of Si(001)/Sb(0.25 ML)-c(4x4)
    Jenkins, SJ
    Srivastava, GP
    APPLIED SURFACE SCIENCE, 1998, 123 : 48 - 51
  • [43] SULFUR-INDUCED C(4X4) RECONSTRUCTION OF THE SI(001) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    MORIARTY, P
    KOENDERS, L
    HUGHES, G
    PHYSICAL REVIEW B, 1993, 47 (23): : 15950 - 15953
  • [44] STRUCTURE OF HYDROGEN ON THE SI(100) SURFACE IN THE (2X1)-H MONOHYDRIDE, (1X1)-H DIHYDRIDE, AND C(4X4)-H PHASES
    SHI, M
    WANG, Y
    RABALAIS, JW
    PHYSICAL REVIEW B, 1993, 48 (03): : 1689 - 1695
  • [45] Carbon contamination and surface temperature effect on Si(100) 2 x 1 → c(4 x 4) reconstruction
    Kim, TJ
    Oh, SH
    Kim, JK
    Kim, DK
    Moon, CH
    Kang, ST
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 (06) : 779 - 782
  • [46] Asymmetric c(4x4)→γ(2x4) reconstruction phase transition on the (001)GaAs Surface
    Galitsyn, Yu. G.
    Dmitriev, D. V.
    Mansurov, V. G.
    Moshchenko, S. P.
    Toropov, A. I.
    JETP LETTERS, 2006, 84 (09) : 505 - 508
  • [47] Crystalline Si3N4 thin films on Si(111) and the 4x4 reconstruction on Si3N4(0001)
    Wang, XS
    Zhai, GJ
    Yang, JS
    Cue, NS
    PHYSICAL REVIEW B, 1999, 60 (04): : R2146 - R2149
  • [48] Evolution of the InAs wetting layer on GaAs(001)-c(4x4) on the atomic scale
    Grabowski, Jan
    Prohl, Christopher
    Hoepfner, Britta
    Daehne, Mario
    Eisele, Holger
    APPLIED PHYSICS LETTERS, 2009, 95 (23)
  • [49] ATOMIC-STRUCTURE OF SI[001]2X1
    YANG, WS
    JONA, F
    MARCUS, PM
    PHYSICAL REVIEW B, 1983, 28 (04): : 2049 - 2059
  • [50] Reaction of dimethylzinc and diethylzinc on the As-rich GaAs(100)-c(4x4) surface
    Lam, HT
    Venkateswaran, N
    Vohs, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1159 - 1162