SOME ANALOGIES BETWEEN LATTICE DEFECTS AND CURRENT CARRIERS IN SEMICONDUCTORS

被引：0

作者：

ROTHSTEIN, J

机构：

来源：

PHYSICAL REVIEW | 1954年 / 93卷 / 04期

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暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：912 / 913

页数：2

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[31] ON THE EXCITON MECHANISM FOR CAPTURE OF CURRENT CARRIERS IN HOMOPOLAR SEMICONDUCTORS
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