SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS

被引：16
|
作者：
LAU, SS
ALLMEN, MV
GOLECKI, I
NICOLET, MA
KENNEDY, EF
TSENG, WF
机构：
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期
关键词：
D O I：
10.1063/1.91109
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：327 / 329
页数：3
相关论文
共 50 条
  • [1] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS
    LAU, SS
    VONALLMEN, M
    GOLECKI, I
    NICOLET, MA
    KENNEDY, EF
    TSENG, WF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C345 - C345
  • [2] TEM, RBS, ELECTRICAL, AND SIMS STUDIES OF BURIED AMORPHOUS LAYERS IN P+ IMPLANTED SI ON SUBSEQUENT FURNACE ANNEALING
    SADANA, DK
    BOOKER, GR
    STRATHMAN, M
    WASHBURN, J
    MAGEE, CW
    MAENPAA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C92 - C92
  • [3] Influence of amorphous layers on performance of nanocrystalline/amorphous superlattice Si solar cells
    Madhavan, Atul
    Ghosh, Debju
    Noack, Max
    Dalal, Vikram
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007, 2007, 989 : 413 - +
  • [4] LASER AND FURNACE ANNEALING MECHANISMS FOR REGROWTH OF ION-IMPLANTED AMORPHOUS SILICON LAYERS
    WILLIAMS, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C363 - C363
  • [5] High temperature annealing amorphous hydrogenated SiC films for the application as window layers in Si-based solar cell
    Hong, Rongdun
    Chen, Xiaping
    Huang, Qian
    Xie, Yannan
    Wu, Shaoxiong
    Zhang, Zifeng
    Wu, Zhengyun
    FRONTIERS OF MANUFACTURING SCIENCE AND MEASURING TECHNOLOGY III, PTS 1-3, 2013, 401 : 631 - +
  • [6] COMBINED CW LASER AND FURNACE ANNEALING OF AMORPHOUS SI AND GE IN CONTACT WITH SOME METALS
    CAUNE, S
    MARFAING, J
    MARINE, W
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 597 - 604
  • [7] Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si
    Girginoudi, S
    Girginoudi, D
    Thanailakis, A
    Georgoulas, N
    Papaioannou, V
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 1968 - 1972
  • [8] Surface morphology evolution of amorphous Fe-Si layers upon thermal annealing
    Sun, C. M.
    Tsang, H. K.
    Wong, S. P.
    Ke, N.
    Hark, S. K.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (08)
  • [9] REGROWTH OF AMORPHOUS SI LAYERS
    CSEPREGI, L
    KENNEDY, EF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C287 - C288
  • [10] Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells
    Feldmann, Frank
    Mueller, Ralph
    Reichel, Christian
    Hermle, Martin
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (09): : 767 - 770
12345